Spectroscopic ellipsometric analysis of ZnSe{sub 1-x}O{sub x} layers with different O compositions
Journal Article
·
· Journal of Applied Physics
- Department of Electrical Engineering, National Central University, Jhongli, 32001 Taiwan (China)
- Department of Optics and Photonics, National Central University, Jhongli, 32001 Taiwan (China)
- Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, Longtan, 32546 Taiwan (China)
In this study, ZnSe{sub 1-x}O{sub x} layers with oxygen contents of up to 7.0% are successfully grown at 300 deg. C on semi-insulating GaAs substrates by molecular beam epitaxy. The deposited ZnSe{sub 1-x}O{sub x} films are characterized by Raman spectroscopy and the optical properties studied by spectroscopic ellipsometry. We examine the complex dielectric function obtained by spectroscopic ellipsometry in the photon range from 1.5 to 5 eV. The shifting and broadening of the critical points in the ZnSe{sub 1-x}O{sub x} epilayers as a function of the O composition are investigated for the first time. The characteristics of the peaks change as the O composition increases. The second derivative of the dielectric function is presented and analyzed. The dielectric function spectra reveal distinct structures which can be attributed to the band gap and optical transitions at higher energy.
- OSTI ID:
- 21537922
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical study of ZnSe{sub x}Te{sub 1-x} alloys using spectroscopic ellipsometry
Study of strain and disorder of In[sub [ital x]]Ga[sub 1[minus][ital x]]P/(GaAs, graded GaP) (0. 25[le][ital x][le]0. 8) using spectroscopic ellipsometry and Raman spectroscopy
Anharmonicity in light scattering by optical phonons in GaAs1-xBix
Journal Article
·
Sun Nov 05 23:00:00 EST 2000
· Applied Physics Letters
·
OSTI ID:40205308
Study of strain and disorder of In[sub [ital x]]Ga[sub 1[minus][ital x]]P/(GaAs, graded GaP) (0. 25[le][ital x][le]0. 8) using spectroscopic ellipsometry and Raman spectroscopy
Journal Article
·
Sun May 15 00:00:00 EDT 1994
· Journal of Applied Physics; (United States)
·
OSTI ID:7072396
Anharmonicity in light scattering by optical phonons in GaAs1-xBix
Journal Article
·
Tue May 24 20:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:1257752
Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CRYSTAL GROWTH METHODS
DIELECTRIC MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
ELLIPSOMETRY
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER SPECTROSCOPY
LAYERS
MASSLESS PARTICLES
MATERIALS
MEASURING METHODS
MOLECULAR BEAM EPITAXY
NONMETALS
OPTICAL PROPERTIES
OXYGEN
OXYGEN COMPOUNDS
PEAKS
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
SUBSTRATES
ZINC COMPOUNDS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CRYSTAL GROWTH METHODS
DIELECTRIC MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
ELLIPSOMETRY
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER SPECTROSCOPY
LAYERS
MASSLESS PARTICLES
MATERIALS
MEASURING METHODS
MOLECULAR BEAM EPITAXY
NONMETALS
OPTICAL PROPERTIES
OXYGEN
OXYGEN COMPOUNDS
PEAKS
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
SUBSTRATES
ZINC COMPOUNDS