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Spectroscopic ellipsometric analysis of ZnSe{sub 1-x}O{sub x} layers with different O compositions

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3511439· OSTI ID:21537922
 [1];  [2]; ;  [3];  [1]
  1. Department of Electrical Engineering, National Central University, Jhongli, 32001 Taiwan (China)
  2. Department of Optics and Photonics, National Central University, Jhongli, 32001 Taiwan (China)
  3. Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan, Longtan, 32546 Taiwan (China)
In this study, ZnSe{sub 1-x}O{sub x} layers with oxygen contents of up to 7.0% are successfully grown at 300 deg. C on semi-insulating GaAs substrates by molecular beam epitaxy. The deposited ZnSe{sub 1-x}O{sub x} films are characterized by Raman spectroscopy and the optical properties studied by spectroscopic ellipsometry. We examine the complex dielectric function obtained by spectroscopic ellipsometry in the photon range from 1.5 to 5 eV. The shifting and broadening of the critical points in the ZnSe{sub 1-x}O{sub x} epilayers as a function of the O composition are investigated for the first time. The characteristics of the peaks change as the O composition increases. The second derivative of the dielectric function is presented and analyzed. The dielectric function spectra reveal distinct structures which can be attributed to the band gap and optical transitions at higher energy.
OSTI ID:
21537922
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English