Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface
- IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)
Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.
- OSTI ID:
- 21518498
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 25; Other Information: DOI: 10.1063/1.3600776; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM SULFIDES
COPPER COMPOUNDS
ENERGY GAP
HETEROJUNCTIONS
INTERFACES
LAYERS
MASS SPECTROSCOPY
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PHOTOLUMINESCENCE
SCATTERING
SELENIUM COMPOUNDS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
THIN FILMS
TIN COMPOUNDS
ULTRAVIOLET RADIATION
VACUUM COATING
ZINC COMPOUNDS
CADMIUM COMPOUNDS
CHALCOGENIDES
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
EMISSION
FILMS
INORGANIC PHOSPHORS
LASERS
LUMINESCENCE
MATERIALS
PHOSPHORS
PHOTON EMISSION
RADIATIONS
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS