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Title: Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3600776· OSTI ID:21518498
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  1. IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

OSTI ID:
21518498
Journal Information:
Applied Physics Letters, Vol. 98, Issue 25; Other Information: DOI: 10.1063/1.3600776; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English