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Title: Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3592568· OSTI ID:21518440
 [1]; ;  [2]; ;  [3];  [4];  [1]
  1. Department of Physics and Astronomy, IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Faculdade de Ciencias da Universidade do Porto, 4169-007 Porto (Portugal)
  2. Instituto Tecnologico e Nuclear, UFA, 2686-953 Sacavem (Portugal)
  3. Instituut voor Kern-en Stralingsfysica and INPAC, K.U.Leuven, 3001 Leuven (Belgium)
  4. Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa (Portugal)

We report on the lattice location of Mn in heavily p-type doped GaAs by means of {beta}{sup -} emission channeling from the decay of {sup 56}Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400 deg. C, with an activation energy for diffusion of 1.7-2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga{sub 1-x}Mn{sub x}As.

OSTI ID:
21518440
Journal Information:
Applied Physics Letters, Vol. 98, Issue 20; Other Information: DOI: 10.1063/1.3592568; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English