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Title: Influence of ion irradiation on switching field and switching field distribution in arrays of Co/Pd-based bit pattern media

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3581896· OSTI ID:21518406
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  1. Hitachi Global Storage Technologies, SJRC, San Jose, California 95135 (United States)
  2. Institut d'Electronique Fondamentale, UMR CNRS 8622, Universite Paris-Sud, 91405 Orsay (France)
  3. DRFMC/SP2M, CEA Grenoble, 38054 Grenoble (France)

We have used ion irradiation to tune switching field and switching field distribution (SFD) in polycrystalline Co/Pd multilayer-based bit pattern media. Light He{sup +} ion irradiation strongly decreases perpendicular magnetic anisotropy amplitude due to Co/Pd interface intermixing, while the granular structure, i.e., the crystalline anisotropy, remains unchanged. In dot arrays, the anisotropy reduction leads to a decrease in coercivity (H{sub C}) but also to a strong broadening of the normalized SFD/H{sub C} (in percentage), since the relative impact of misaligned grains is enhanced. Our experiment thus confirms the major role of misorientated grains in SFD of nanodevice arrays.

OSTI ID:
21518406
Journal Information:
Applied Physics Letters, Vol. 98, Issue 17; Other Information: DOI: 10.1063/1.3581896; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English