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Title: A transparent ultraviolet triggered amorphous selenium p-n junction

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3579262· OSTI ID:21518385
; ; ;  [1]; ; ; ;  [2];  [3];  [4]; ;  [5];  [6]
  1. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom)
  2. Department of Physics, International Christian University, 3-10-2 Osawa Mitaka, Tokyo 181-8585 (Japan)
  3. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)
  4. Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)
  5. Department of Materials Science and Engineering, National University of Singapore, 21 Lower Kent Ridge Road, Singapore 119077 (Singapore)
  6. Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu Yokosuka, Kanagawa 239-8686 (Japan)

This paper will introduce a semitransparent amorphous selenium (a-Se) film exhibiting photovoltaic effects under ultraviolet light created through a simple and inexpensive method. We found that chlorine can be doped into a-Se through electrolysis of saturated salt water, and converts the weak p-type material into an n-type material. Furthermore, we found that a p-n diode fabricated through this process has shown an open circuit voltage of 0.35 V toward ultraviolet illumination. Our results suggest the possibility of doping control depending on the electric current during electrolysis and the possibility of developing a simple doping method for amorphous photoconductors.

OSTI ID:
21518385
Journal Information:
Applied Physics Letters, Vol. 98, Issue 15; Other Information: DOI: 10.1063/1.3579262; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English