Growth of multilayers of Bi{sub 2}Se{sub 3}/ZnSe: Heteroepitaxial interface formation and strain

Journal Article · Mon Jan 24 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3548865· OSTI ID:21518263

Li, H D ^[1]; Wang, Z Y; Guo, X; Xie, M H ^[1]; Wong, Tai Lun; Wang, Ning ^[2]

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1. Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)
2. Department of Physics, Hong Kong University of Science and Technology, Kowloon (Hong Kong)

Multilayers of Bi{sub 2}Se{sub 3}/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi{sub 2}Se{sub 3} on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi{sub 2}Se{sub 3} showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi{sub 2}Se{sub 3}/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi{sub 2}Se{sub 3}, which could be attributed to the specific growth modes and the properties of Bi{sub 2}Se{sub 3} and ZnSe surfaces.

• OSTI ID: 21518263
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASYMMETRY
BISMUTH COMPOUNDS
BISMUTH SELENIDES
CHALCOGENIDES
CRYSTAL GROWTH METHODS
EPITAXY
INTERFACES
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NUCLEATION
PERIODICITY
RELAXATION
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
STRAINS
STRESS RELAXATION
SURFACES
VARIATIONS
ZINC COMPOUNDS
ZINC SELENIDES