Ohmic contact properties of magnetron sputtered Ti{sub 3}SiC{sub 2} on n- and p-type 4H-silicon carbide

Journal Article · Mon Jan 24 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3549198· OSTI ID:21518261

Buchholt, K; Lu, J; Eklund, P; Hultman, L; Spetz, A Lloyd ^[1]; Ghandi, R; Domeij, M; Zetterling, C -M ^[2]

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1. Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden)
2. School of Information and Communication Technology, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista-Stockholm (Sweden)

Epitaxial Ti{sub 3}SiC{sub 2} (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 deg. C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10{sup -4} {Omega} cm{sup 2}. Transmission electron microscopy shows that the interface between Ti{sub 3}SiC{sub 2} and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.

• OSTI ID: 21518261
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH METHODS
DEPOSITION
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FILMS
HEAT TREATMENTS
INTERFACES
MAGNETRONS
MATERIALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
POWER TRANSMISSION LINES
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
SPUTTERING
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TITANIUM CARBIDES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY