Strain distribution in bent ZnO microwires

Journal Article · Sun Jan 16 23:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3544939· OSTI ID:21518250

Dietrich, C P; Lange, M; Kluepfel, F J; Wenckstern, H von; Schmidt-Grund, R; Grundmann, M ^[1]

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1. Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestr. 5, 04103 Leipzig (Germany)

ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state was studied with spatially resolved low-temperature photoluminescence. Inhomogeneous (tensile and compressive) stress (up to {+-}1 GPa) is visualized by the redshift and blueshift of the wire luminescence. Experimentally determined tensile and compressive strain along the c-axis (wire axis) of up to 1.5 %, symmetrically distributed with respect to the central axis (neutral fiber), is achieved, resulting in maximum energetic shifts of {+-}30 meV. Within these experiments, we are able to precisely determine the direct relation between energetic shift of the free A-exciton energy and strain to (-2.04{+-}0.02) eV.

• OSTI ID: 21518250
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHALCOGENIDES
COMPRESSION STRENGTH
DEFORMATION
DISTRIBUTION
EMISSION
ENERGY RANGE
EV RANGE
FABRICATION
FIBERS
LUMINESCENCE
MATERIALS
MECHANICAL PROPERTIES
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PHOTON EMISSION
PRESSURE RANGE
PRESSURE RANGE GIGA PA
QUANTUM WIRES
RED SHIFT
SEMICONDUCTOR MATERIALS
STRAINS
STRESSES
TENSILE PROPERTIES
ZINC COMPOUNDS
ZINC OXIDES