Effects of Ti incorporation on the interface properties and band alignment of HfTaO{sub x} thin films on sulfur passivated GaAs

Journal Article · Mon Jan 10 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3536520· OSTI ID:21518245

Das, T; Mahata, C; Maiti, C K ^[1]; Miranda, E ^[2]; Sutradhar, G; Bose, P K ^[3]

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1. Department of Electronics and ECE, Indian Institute of Technology, Kharagpur (India)
2. Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)
3. Department of Mechanical Engineering, Jadavpur University, Jadavpur, Kolkata (India)

Thin HfTaO{sub x} and HfTaTiO{sub x} gate dielectrics ({approx}7-8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface and As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility of tailoring of band alignment via Ti incorporation is shown. Valence band offsets of 2.6{+-}0.05 and 2.68{+-}0.05 eV and conduction-band offsets of 1.43{+-}0.05 and 1.05{+-}0.05 eV were found for HfTaO{sub x} (E{sub g{approx}}5.45 eV) and HfTaTiO{sub x} (E{sub g{approx}}5.15 eV), respectively.

• OSTI ID: 21518245
• Journal Information: Applied Physics Letters, Vol. 98, Issue 2; Other Information: DOI: 10.1063/1.3536520; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DIELECTRIC MATERIALS
DIFFUSION
ENERGY GAP
EV RANGE
GALLIUM ARSENIDES
HAFNIUM COMPOUNDS
INTERFACES
SEMICONDUCTOR MATERIALS
SPUTTERING
SULFUR
SURFACES
TANTALATES
THIN FILMS
TITANIUM ADDITIONS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ENERGY RANGE
FILMS
GALLIUM COMPOUNDS
MATERIALS
NONMETALS
OXYGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TITANIUM ALLOYS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS