Enhanced critical temperature in epitaxial ferroelectric Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films on silicon

Journal Article · Mon Jan 03 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3532110· OSTI ID:21518236

Sambri, A; Gariglio, S; Torres Pardo, A; Triscone, J -M ^[1]; Stephan, O ^[2]; Reiner, J W; Ahn, C H ^[3]

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1. Department of Condensed Matter Physics (DPMC), University of Geneva, 24 quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland)
2. Laboratoire de Physique des Solides, Universite Paris-Sud, CNRS-UMR 8502, Orsay 91405 (France)
3. Department of Applied Physics, Yale University, P.O. Box 208284, New Haven, Connecticut 06520-8284 (United States)

The structural and electrical properties of epitaxial Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} thin films grown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 deg. C increase of the Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.

• OSTI ID: 21518236
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COHERENT SCATTERING
CRITICAL TEMPERATURE
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
DIFFRACTION
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FERROELECTRIC MATERIALS
FILMS
LAYERS
LEAD COMPOUNDS
MATERIALS
MOLECULAR BEAM EPITAXY
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SCATTERING
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
THERMODYNAMIC PROPERTIES
THIN FILMS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
TWO-DIMENSIONAL CALCULATIONS
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS