Method For Silicon Surface Texturing Using Ion Implantation

Journal Article · Wed Jun 01 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3586115· OSTI ID:21513375

Kadakia, Nirag; Naczas, Sebastian; Bakhru, Hassaram; Mengbing, Huang ^[1]

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1. College of Nanoscale Science and Engineering, State University of New York at Albany, 255 Fuller Road, Albany NY 12203 (United States)

As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods - ion implantation - is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

• OSTI ID: 21513375
• Journal Information: AIP Conference Proceedings, Vol. 1336, Issue 1; Conference: CAARI 2010: 21. International Conference on the Application of Accelerators in Research and Industry, Fort Worth, TX (United States), 8-13 Aug 2010; Other Information: DOI: 10.1063/1.3586115; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHANNELING
DAMAGE
DIFFUSION
FABRICATION
IMPLANTS
INDUSTRY
ION IMPLANTATION
PHOTOVOLTAIC EFFECT
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON SOLAR CELLS
SURFACES
TEXTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PHOTOVOLTAIC CELLS
RADIATION EFFECTS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY