Influence of Nitrogen Gas Flow Rate on the Electrical Behavior of an Atmospheric Pressure Dielectric Barrier Jet Discharge
Journal Article
·
· AIP Conference Proceedings
- Plasma Technology Research Center, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)
The dielectric barrier discharge configuration used consists of a hemispherical electrode insulated by 1 mm thick borosilicate glass and a grounded plate with a hole through which the jet is formed externally in the surrounding air. The effect of gas flow rate on the behavior of an atmospheric pressure dielectric barrier jet discharge was studied for different air-gap distance and drive voltage, V{sub DD}, to the MOSFET. It is found that at higher rate of nitrogen gas flow, the current spikes reduce in number when the driving voltage and air-gap distance are kept constant.
- OSTI ID:
- 21511556
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1328; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AIR
ALGEBRAIC CURRENTS
ATMOSPHERIC PRESSURE
BOROSILICATE GLASS
CONFIGURATION
CURRENTS
DIELECTRIC MATERIALS
ELECTRIC DISCHARGES
ELECTRIC POTENTIAL
ELECTRODES
ELEMENTS
FIELD EFFECT TRANSISTORS
FLUID FLOW
FLUIDS
GAS FLOW
GASES
GLASS
JETS
MATERIALS
MOS TRANSISTORS
MOSFET
NEUTRAL CURRENTS
NITROGEN
NONMETALS
PLATES
SEMICONDUCTOR DEVICES
TRANSISTORS
GENERAL PHYSICS
AIR
ALGEBRAIC CURRENTS
ATMOSPHERIC PRESSURE
BOROSILICATE GLASS
CONFIGURATION
CURRENTS
DIELECTRIC MATERIALS
ELECTRIC DISCHARGES
ELECTRIC POTENTIAL
ELECTRODES
ELEMENTS
FIELD EFFECT TRANSISTORS
FLUID FLOW
FLUIDS
GAS FLOW
GASES
GLASS
JETS
MATERIALS
MOS TRANSISTORS
MOSFET
NEUTRAL CURRENTS
NITROGEN
NONMETALS
PLATES
SEMICONDUCTOR DEVICES
TRANSISTORS