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Synthesis of Endohedral Fullerene Using ECR Ion Source

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3548456· OSTI ID:21511444
 [1];  [2]; ;  [3]; ;  [4];  [5]; ;  [6];  [1]
  1. Graduate School of Engineering, Toyo University, 2100 Kujirai, Kawagoe, Saitama (Japan)
  2. Bio-Nano Electronics Research Centre, Toyo University, 2100 Kujirai, Kawagoe, Saitama (Japan)
  3. Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama, Toyama (Japan)
  4. National Institute of Radiological Sciences (NIRS), 4-9-1 Anagawa, Inage, Chiba (Japan)
  5. Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka (Japan)
  6. Institute of Nuclear Research (ATOMKI), H-4026 Debrecen (Hungary)

We are developing an ECRIS apparatus which is designed for the production of endohedral fullerenes. Our promising approaches to produce the endohedral fullerenes using the ECRIS are the ion-ion collision reaction of fullerenes and the other atom in their mixture plasma and simple ion implantation of atom into fullerene layer. In this study, we tried to synthesize the endohedral nitrogen-fullerenes by ion implantation. N{sup +} beam was irradiated to a fullerene target with a specific energy and dose. As a result, we could observe the peak of N+C{sub 60} from targets after N{sup +} beam irradiation with TOF-SIMS and LDI-TOF-MS.

OSTI ID:
21511444
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1321; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English