Effect of Helium implantation on gettering and electrical properties of 4H-SiC epilayers

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548363· OSTI ID:21510102

Biondo, Stephane; Regula, Gabrielle; Ottaviani, Laurent; Palais, Olivier; Pichaud, Bernard ^[1]

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1. Im2np Aix-Marseille Universite and UMR CNRS 6242-Universite Paul Cezanne, Campus de Saint-Jerome, Avenue Escadrille Normandie Niemen-Case 231, 13397 MARSEILLE Cedex 20 (France)

This paper tests the gettering ability of sites created by He implantation in 4H-SiC while heating the sample or not, and their impact on carrier lifetime. The spatial distribution of implantation-induced defects (cavities, stacking faults and dislocations) is studied by transmission electron microscopy (TEM) and is compared to gold profiles performed by Rutherford Backscattering (RBS) in samples intentionally contaminated with gold. Minority carrier lifetimes are also measured with a specific set-up based on microwave photoconductivity decay ({mu}-PCD). Though gold atoms do not seem to be efficiently trapped by cavities, the presence of dislocations is of major importance to monitor gold diffusion. Indeed, they can double both its level and its diffusion length in the bulk. Gold is assumed to diffuse faster along dislocation cores. Besides, the implantation-related defects are found to improve the carrier lifetime in the material, but the role of He{sup 2+} left in cavities remains to be investigated.

• OSTI ID: 21510102
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548363; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CARRIER LIFETIME
CRYSTAL DEFECTS
DIFFUSION
DIFFUSION LENGTH
DISLOCATIONS
GOLD
HEATING
HELIUM IONS
ION IMPLANTATION
MICROWAVE RADIATION
PHOTOCONDUCTIVITY
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON CARBIDES
SPATIAL DISTRIBUTION
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CRYSTAL STRUCTURE
DIMENSIONS
DISTRIBUTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
IONS
LENGTH
LIFETIME
LINE DEFECTS
METALS
MICROSCOPY
PHYSICAL PROPERTIES
RADIATION EFFECTS
RADIATIONS
SILICON COMPOUNDS
SPECTROSCOPY
TRANSITION ELEMENTS