Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548356· OSTI ID:21510098

Abo, Satoshi; Nishikawa, Kazuhisa; Ushigome, Naoya; Wakaya, Fujio; Takai, Mikio ^[1]; Iwamatsu, Toshiaki; Oda, Hidekazu ^[2]

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1. Center for Quantum Science and Technology under Extreme Conditions, Osaka University, 1-3, Machikaneyama, Toyonaka, Osaka, 560-8531 (Japan)
2. Advanced Device Technology Department, Production and Technology Unit, Devices and Analysis Technology Division, Renesas Electronics Corporation, 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504 (Japan)

Local resistance profiles of ultra shallow boron and arsenic implanted into silicon with energies of 2.0 and 4.0 keV and doses of 2.0x10{sup 15} and 1.0x10{sup 15} ions/cm{sup 2} activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscope (SSRM) with a depth resolution of less than 10 nm. The lowest local resistance at the low resistance region in 2.0 keV boron implanted silicon with 1050 deg. C spike lamp annealing followed by 0.35 kW/mm{sup 2} laser annealing was half of that without laser annealing. The lowest local resistance at the low resistance region in the arsenic implanted silicon activated by 1050 deg. C spike lamp annealing followed by 0.39 kW/mm{sup 2} laser annealing was 74% lower than that followed by 0.36 kW/mm{sup 2} laser annealing. The lowest local resistances at the low resistance regions in the arsenic implanted silicon with 0.36 and 0.39 kW/mm{sup 2} laser annealing followed by 1050 deg. C spike lamp annealing were 41 and 33% lower than those with spike lamp annealing followed by laser annealing. Laser annealing followed by spike lamp annealing could suppress the diffusion of the impurities and was suitable for making the ultra shallow and low resistance regions.

• OSTI ID: 21510098
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548356; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ARSENIC IONS
ATOMIC FORCE MICROSCOPY
BORON IONS
DEPTH
DIFFUSION
DOSES
ELECTRIC CONDUCTIVITY
IMPURITIES
ION IMPLANTATION
ION MOBILITY
IONS
KEV RANGE
LASER RADIATION
LIGHT BULBS
MASS SPECTROSCOPY
MICROSCOPES
RESOLUTION
SILICON
CHARGED PARTICLES
DIMENSIONS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
MICROSCOPY
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SPECTROSCOPY