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Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Journal Article · · Journal of Solid State Chemistry
 [1]; ; ; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Pb{sub 0.4}Sr{sub 0.6}TiO{sub 3} (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi{sub 2}Ti{sub 2}O{sub 7} biphase were obtained. The thin films with pure Bi{sub 2}Ti{sub 2}O{sub 7} pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi{sub 2}Ti{sub 2}O{sub 7} biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase. - Graphical abstract: The Bi-doped Pb{sub 0.4}Sr{sub 0.6}TiO{sub 3} (PST) thin films prepared by the sol-gel method showed a PST/Bi{sub 2}Ti{sub 2}O{sub 7} biphase structure for 0.2<x<0.4, and had the low dielectric capacitance and dielectric loss. Display Omitted
OSTI ID:
21494114
Journal Information:
Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 11 Vol. 183; ISSN 0022-4596; ISSN JSSCBI
Country of Publication:
United States
Language:
English