Improving thermoelectric materials: Site-selective {open_quotes}doping{close_quotes} of the Bi{sub 2}Q{sub 3} structure with transition metals

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:214939

Malo, T M; Raymond, C C; Dorhout, P K ^[1]

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1. Colorado State Univ., Fort Collins, CO (United States)

A great deal of emphasis in the development of thermoelectric materials has been placed on the doping of the bismuth chalcogenides, Bi{sub 2}Q{sub 3}, in an effort to increase the efficiency of the thermopower of such compounds as Bi{sub 2}Te{sub 3} by increasing the carrier concentrations within the material. There is, however, a host of {open_quotes}site-substituted{close_quotes} compounds such as PbBi{sub 2}Te{sub 4} and PbBi{sub 4}Te{sub 7} whose properties have not been well documented and whose syntheses are not well understood. We have employed low temperature (molten salt and mediated metathesis) reactions to explore the reactivity of other M(II) cations such as Cu and Ni. Powder and single-crystal X-ray diffraction confirm the formation of several new phases such as CuBi{sub 4}Se{sub 7} and a structural variation of BiSe. A discussion of the synthetic methods and the structural and physical chemistry of the solids is planned.

• OSTI ID: 214939
• Report Number(s): CONF-950801--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH SELENIDES
BISMUTH TELLURIDES
CHALCOGENIDES
COPPER SELENIDES
LEAD TELLURIDES
MICROSTRUCTURE
PHYSICAL PROPERTIES
THERMOELECTRIC MATERIALS
X-RAY DIFFRACTION