Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3489882· OSTI ID:21476524

Lee, Seunghyup; Kim, Heejin; Park, Jinjoo; Yong, Kijung ^[1]

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1. Department of Chemical Engineering, Surface Chemistry Laboratory of Electronic Materials (SCHEMA), Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)

This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I{sub c})=40 mA, regardless of the applied voltage polarity. With low I{sub c}=5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting I{sub c} but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching.

• OSTI ID: 21476524
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 7; Other Information: DOI: 10.1063/1.3489882; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRODEPOSITION
HETEROJUNCTIONS
INTERFACES
PLATINUM
SEMICONDUCTOR MATERIALS
SILVER
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ZINC OXIDES
CHALCOGENIDES
CURRENTS
DEPOSITION
ELECTRICAL PROPERTIES
ELECTROLYSIS
ELEMENTS
FILMS
LYSIS
MATERIALS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLATINUM METALS
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
TEMPERATURE RANGE
TRANSITION ELEMENTS
ZINC COMPOUNDS