Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3481375· OSTI ID:21476470

Cueff, Sebastien; Labbe, Christophe; Cardin, Julien; Doualan, Jean-Louis; Khomenkova, Larysa; Hijazi, Khalil; Rizk, Richard ^[1]; Jambois, Olivier; Garrido, Blas ^[2]

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1. Centre de Recherche sur les Ions, les Materiaux et la Photonique (CIMAP), ENSICAEN, CNRS, CEA/IRAMIS, Universite de Caen, 14050 CAEN Cedex (France)
2. Dept. Electronica, MIND-IN2UB, Universitat de Barcelona, Marti i Fanques 1, 08028 Barcelona, CAT (Spain)

This study investigates the influence of the deposition temperature T{sub d} on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For T{sub d} exceeding 200 deg. C, an efficient indirect excitation of Er ions is observed for all as-deposited samples. The photoluminescence intensity improves gradually up to a maximum at T{sub d}=600 deg. C before decreasing for higher T{sub d} values. The effects of this ''growth-induced annealing'' are compared to those resulting from the same thermal budget used for the ''classical'' approach of postdeposition annealing performed after a room temperature deposition. It is demonstrated that the former approach is highly beneficial, not only in terms of saving time but also in the fourfold enhancement of the Er photoluminescence efficiency.

• OSTI ID: 21476470
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 6; Other Information: DOI: 10.1063/1.3481375; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
CRYSTAL GROWTH
DEPOSITION
ENERGY TRANSFER
ERBIUM
ERBIUM IONS
EXCITATION
HEATING
LAYERS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICA
SILICON
SILICON OXIDES
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
CHALCOGENIDES
CHARGED PARTICLES
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
FILMS
HEAT TREATMENTS
IONS
LUMINESCENCE
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
RARE EARTHS
SEMIMETALS
SILICON COMPOUNDS