Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3484039· OSTI ID:21476463

Podhorodecki, A; Banski, M; Misiewicz, J ^[1]; Lecerf, C; Marie, P; Cardin, J; Portier, X ^[2]

---

1. Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
2. CIMAP, CEA/UMR CNRS 6252/ENSICAEN, Universite de Caen Basse Normandie, 6 Boulevard Marechal Juin, 14050 Caen (France)

Gallium oxide and more particularly {beta}-Ga{sub 2}O{sub 3} matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.

• OSTI ID: 21476463
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 6; Other Information: DOI: 10.1063/1.3484039; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DEPOSITION
DOPED MATERIALS
EXCITATION
GALLIUM OXIDES
GRAIN SIZE
MATRIX MATERIALS
NANOSTRUCTURES
NEODYMIUM
NEODYMIUM IONS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
CHALCOGENIDES
CHARGED PARTICLES
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
FILMS
GALLIUM COMPOUNDS
IONS
LUMINESCENCE
MATERIALS
METALS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
RARE EARTHS
SIZE