Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3466996· OSTI ID:21476365

Wang, X; Shen, Z H; Lu, J; Ni, X W ^[1]

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1. School of Science, Nanjing University of Science and Technology, Nanjing 210094 (China)

Millisecond, nanosecond, and picosecond laser pulse induced damage thresholds on single-crystal are investigated in this study. The thresholds of laser-induced damage on silicon are calculated theoretically for three pulse widths based on the thermal damage model. An axisymmetric mathematical model is established for the transient temperature field of the silicon. Experiments are performed to test the damage thresholds of silicon at various pulse widths. The results indicate that the damage thresholds obviously increase with the increasing of laser pulse width. Additionally, the experimental results agree well with theoretical calculations and numerical simulation results.

• OSTI ID: 21476365
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 3; Other Information: DOI: 10.1063/1.3466996; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ABLATION
AXIAL SYMMETRY
COMPUTERIZED SIMULATION
DAMAGE
LASER RADIATION
MATHEMATICAL MODELS
MONOCRYSTALS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
SILICON
TRANSIENTS
VELOCITY
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
IRRADIATION
MATERIALS
RADIATIONS
SEMIMETALS
SIMULATION
SYMMETRY