Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3465327· OSTI ID:21476356

Chin, Hock-Chun; Gong, Xiao; Yeo, Yee-Chia ^[1]; Ng, Tien Khee; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt ^[2]; Wong, Choun Pei; Shen, Zexiang ^[3]

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1. Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576 (Singapore)
2. School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore)
3. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University (NTU), Singapore 637371 (Singapore)

Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process.

• OSTI ID: 21476356
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 2; Other Information: DOI: 10.1063/1.3465327; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AUGER ELECTRON SPECTROSCOPY
CRYSTAL GROWTH
FINITE ELEMENT METHOD
GALLIUM ARSENIDES
GERMANIUM
GERMANIUM SILICIDES
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
GERMANIUM COMPOUNDS
MATERIALS
MATHEMATICAL SOLUTIONS
METALS
MICROSCOPY
NANOSTRUCTURES
NUMERICAL SOLUTION
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY