Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films

Journal Article · Thu Jul 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3462467· OSTI ID:21476354

Liu, M; Zhang, L D; He, G; Wang, X J; Fang, M ^[1]

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1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

Interfacial and optical properties of HfTiO films with different Ti concentration grown by radio frequency reactive magnetron sputtering have been investigated by x-ray photoelectron spectroscopy (XPS) and spectroscopy ellipsometry (SE). XPS spectra indicate that interfacial layer is formed unavoidably for Ti doped and undoped HfO{sub 2} thin films and the interfacial structure is stable for Ti doped films. The composition of interfacial layer is most likely silicate and SiO{sub x}. Meanwhile, SE results indicate that the band gap of HfTiO thin films decreases with the increase in Ti concentration. Further results show that the valence band offset ({Delta}E{sub v}) decreases from 2.32 to 1.91 eV while the conduction band offset ({Delta}E{sub c}) decreases from 2.05 eV to 0.99 with the increase in Ti content. The optical constants consist of refractive index and extinction coefficient have also been investigated to provide the valuable references to prepare and select the HfTiO thin films for future high-k gate dielectrics.

• OSTI ID: 21476354
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
DEPOSITION
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON SPECTRA
ELECTRON SPECTROSCOPY
ELLIPSOMETRY
ENERGY GAP
ENERGY RANGE
EV RANGE
FILMS
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
INTERFACES
LAYERS
MATERIALS
MEASURING METHODS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
REFRACTIVE INDEX
REFRACTORY METAL COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
SPECTROSCOPY
SPUTTERING
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY