Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films

Journal Article · Thu Jul 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3456527· OSTI ID:21476350

Kim, Dong-Ho; Lee, Sung-Hun; Lee, Gun-Hwan ^[1]; Kim, Hyun-Bum; Kim, Kwang Ho ^[2]; Lee, Yoon-Gyu; Yu, Tae-Hwan ^[3]

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1. Functional Coatings Research Group, Korea Institute of Materials Science (KIMS), 531 Changwondaero, Changwon, Gyeongnam 641-831 (Korea, Republic of)
2. School of Materials Science and Engineering, Pusan National University, Pusan 609-735 (Korea, Republic of)
3. Electronic Materials Laboratory, Samsung Corning Precision Glass Co. Ltd., 644-1 Jinpyeong-Dong, Gumi, KyoungBuk 730-360 (Korea, Republic of)

Gallium-doped zinc oxide thin films were prepared on glass substrates by dc magnetron sputtering under various hydrogen contents in sputtering ambient. The carrier concentration of the films deposited at low-temperatures (80 and 160 deg. C) was increased due to the incorporation of hydrogen atoms, acting as shallow donors. A low resistivity of 4.0x10{sup -4} {Omega} cm was obtained for the film grown at 160 deg. C with H{sub 2} 10%, which has a carrier concentration of 8.2x10{sup 20}/cm{sup 3}. The beneficial effect of hydrogen doping was not observed for the films deposited at 270 deg. C. Both carrier concentration and mobility were decreased by the addition of hydrogen gas in the sputtering ambient. Variations in the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. The hydrogen incorporation was found to induce the lattice expansion and the free carrier absorption in near infrared range. The investigation of the structural and optical properties of the films upon annealing also revealed that the incorporated hydrogen atoms are unstable at high temperature, which is consistent with the results obtained in the electrical properties.

• OSTI ID: 21476350
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 108; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
GALLIUM
HEAT TREATMENTS
HYDROGEN
INTERSTITIALS
MATERIALS
METALS
MOBILITY
NONMETALS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHASE STABILITY
PHYSICAL PROPERTIES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SPUTTERING
STABILITY
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES