Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3447981· OSTI ID:21476322

Yamada, Takahiro; Makino, Hisao; Yamamoto, Naoki; Yamamoto, Tetsuya ^[1]

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1. Materials Design Center, Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi 782-8502 (Japan)

Transparent conducting polycrystalline Ga-doped ZnO (GZO) films with different thicknesses were deposited on glass substrates at a substrate temperature of 200 deg. C by ion-plating deposition with direct current arc-discharge. The dependences of crystal structure, electrical, and optical properties of the GZO films on thickness have been systematically studied. Optical response due to free electrons of the GZO films was characterized in the photon energy range from 0.73 to 3.8 eV by spectroscopic ellipsometry (SE). The free electron response was expressed by the simple Drude model combined with the Tauc-Lorentz model. From the SE analysis and the results of Hall measurements, electron effective mass, m{sup *}, and optical mobility, {mu}{sub opt}, of the GZO films were determined, based on the assumptions that the films are homogeneous and optically isotropic. By comparing the {mu}{sub opt} and Hall mobility, {mu}{sub Hall}, an indication on the effect of ingrain and grain boundary scattering limiting the electron mobility has been obtained. Moreover, the variation in scattering mechanism causing thickness dependence of {mu}{sub Hall} was correlated with the development of polycrystalline grain structure.

• OSTI ID: 21476322
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 12; Other Information: DOI: 10.1063/1.3447981; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
DIRECT CURRENT
DOPED MATERIALS
EFFECTIVE MASS
ELECTRIC ARCS
ELECTRON MOBILITY
ELLIPSOMETRY
EV RANGE
GALLIUM
GLASS
GRAIN BOUNDARIES
GRANULAR MATERIALS
HALL EFFECT
OPACITY
POLYCRYSTALS
POLYMERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
ZINC OXIDES
CHALCOGENIDES
CRYSTALS
CURRENTS
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELEMENTS
ENERGY RANGE
FILMS
MASS
MATERIALS
MEASURING METHODS
METALS
MICROSTRUCTURE
MOBILITY
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PARTICLE MOBILITY
PHYSICAL PROPERTIES
ZINC COMPOUNDS