Rotating cylindrical magnetron sputtering: Simulation of the reactive process

Journal Article · Tue Jun 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3415550· OSTI ID:21476281

Depla, D; Mahieu, S; Van Aeken, K; Leroy, W P; Haemers, J; De Gryse, R ^[1]; Li, X Y ^[2]; Bogaerts, A ^[3]

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1. Department of Solid State Sciences, Research Group DRAFT, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium)
2. Department of Physics, Taiyuan University of Technology, 030024 Taiyuan (China)
3. Department of Chemistry, Research Group PLASMANT, University of Antwerp, Universiteitsplein 1, 2610 Wilrijk-Antwerp (Belgium)

A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

• OSTI ID: 21476281
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATHODES
CHEMICAL REACTIONS
CHEMISORPTION
CONFIGURATION
CYLINDRICAL CONFIGURATION
DEPOSITION
ELECTRODES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
HYSTERESIS
ION IMPLANTATION
MAGNETRONS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MOTION
PLASMA
ROTATION
SEPARATION PROCESSES
SORPTION
SPUTTERING