Characterization of Cu buffer layers for growth of L1{sub 0}-FeNi thin films

Journal Article · Sat May 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3337649· OSTI ID:21476206

Mizuguchi, M; Sekiya, S; Takanashi, K ^[1]

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1. Institute of Materials Science, Tohoku University, Aoba-ku, Sendai 980-8577 (Japan)

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L1{sub 0}-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu{sub 3}). An FeNi thin film was epitaxially grown on the AuCu{sub 3} buffer layer by alternate monatomic layer deposition and the formation of an L1{sub 0}-FeNi ordered alloy was expected. The AuCu{sub 3} buffer layer is thus a promising candidate material for the growth of L1{sub 0}-FeNi thin films.

• OSTI ID: 21476206
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
FILMS
GOLD
IRON ALLOYS
LAYERS
METALS
NANOSTRUCTURES
NICKEL ALLOYS
REFLECTION
SCATTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENTS