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Self-aligned nanostructures created by swift heavy ion irradiation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3354093· OSTI ID:21476192
; ;  [1];  [2];  [3];  [4]
  1. 2. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hundplatz 1, D-37077 Goettingen (Germany)
  2. Hochschule Harz, Friedrichstrasse 57-59, D-38855 Wernigerode (Germany)
  3. GSI Helmholzzentrum fuer Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt (Germany)
  4. Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

In tetrahedral amorphous carbon (ta-C) swift heavy ions create conducting tracks of about 8 nm in diameter. To apply these nanowires and implement them into nanodevices, they have to be contacted and gated. In the present work, we demonstrate the fabrication of conducting vertical nanostructures in ta-C together with self-aligned gate electrodes. A multilayer assembly is irradiated with GeV heavy ions and subsequently exposed to several selective etching processes. The samples consist of a Si wafer as substrate covered by a thin ta-C layer. On top is deposited a SiN{sub x} film for insulation, a Cr layer as electrode, and finally a polycarbonate film as ion track template. Chemical track etching opens nanochannels in the polymer which are self-aligned with the conducting tracks in ta-C because they are produced by the same ions. Through the pores in the polymer template, the Cr and SiN{sub x} layers are opened by ion beam sputtering and plasma etching, respectively. The resulting structure consists of nanowires embedded in the insulating carbon matrix with a built in gate electrode and has potential application as gated field emission cathode.

OSTI ID:
21476192
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English