Self-assembly and magnetic properties of MnAs nanowires on GaAs(001) substrate

Journal Article · Mon Mar 15 04:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3357309· OSTI ID:21476167

Xu, F ^[1]; Huang, P W; Huang, J H; Lee, W N; Chin, T S ^[2]; Ku, H C ^[3]; Du, Y W ^[4]

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1. Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)
2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
3. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
4. Department of Physics, Nanjing University, Nanjing 210093 (China)

The in-plane aligned MnAs nanowires have been grown by molecular-beam epitaxy on GaAs(001) substrates at high growth temperature ({>=}450 deg. C). A discontinuous growth with break intervals (50 s' interval per 10 s' growth) was employed. The obtained nanowires were identified to be mainly type-B hexagonal MnAs. The influences of growth temperature and As{sub 4}/Mn flux ratio on the nanowires' morphology were investigated. Both high growth temperature and high As{sub 4}/Mn flux ratio are necessary for the growth of uniaxially aligned MnAs nanowires with high aspect ratio. The magnetic anisotropy of the nanowires and their multimodal size distributions contribute to the large coercivity and special shape of the M-H loops along the magnetic easy axis, which is [1102]MnAs||[110]GaAs. However, the longer growth time would lead to the both azimuthal alignments of the MnAs wires and the weakening of the magnetic anisotropy.

• OSTI ID: 21476167
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 107; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
ASPECT RATIO
COERCIVE FORCE
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIMENSIONLESS NUMBERS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEXAGONAL LATTICES
LAYERS
MAGNETIC PROPERTIES
MANGANESE ARSENIDES
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
PHYSICAL PROPERTIES
PNICTIDES
QUANTUM WIRES
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS