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Title: Electronic structure and magnetism of the diluted magnetic semiconductor Fe-doped ZnO nanoparticles

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3294620· OSTI ID:21476128
; ; ;  [1];  [1]; ; ; ;  [2]; ; ; ;  [3];  [3];  [4]; ;  [5];  [6];  [7]
  1. Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)
  2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
  3. Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148 (Japan)
  4. Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan)
  5. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721302 (India)
  6. Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Center, Mumbai 400085 (India)
  7. Department of Solid State Physics and Center for Advanced Materials, Indian Association for the Cultivation of Science, Jadavpur Kolkata 700032 (India)

We have studied the electronic structure of Fe-doped ZnO nanoparticles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy, resonant photoemission spectroscopy, x-ray absorption spectroscopy, and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe{sup 3+} ionic state with mixture of a small amount of Fe{sup 2+} and that Fe{sup 3+} ions are dominant in the surface region of the nanoparticles. It is shown that the room temperature ferromagnetism in the Fe-doped ZnO nanoparticles primarily originated from the antiferromagnetic coupling between unequal amounts of Fe{sup 3+} ions occupying two sets of nonequivalent positions in the region of the XMCD probing depth of {approx}2-3 nm.

OSTI ID:
21476128
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 3; Other Information: DOI: 10.1063/1.3294620; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English