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Title: Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO{sub 2} (101) thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3298467· OSTI ID:21476127
 [1]; ; ;  [1];  [2]
  1. Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

As-grown and oxygen plasma treated n-type tin dioxide (SnO{sub 2}) (101) thin films were investigated regarding the properties of Au contacts, surface structure, and band bending. The plasma treatment was performed in a conventional oxygen plasma cleaning system with maximum oxygen ion energies of 400 eV. Whereas the as-deposited SnO{sub 2} film formed non-Schottky contacts with Au, the oxygen plasma treated films formed Schottky contacts with Au. Capacitance-voltage and differential Hall measurements indicated the introduction of bulk electron traps up to several 100 nm below the surface due to the oxygen plasma treatment. Angle resolved x-ray photoelectron spectroscopy (AR-XPS) revealed a surface accumulation layer on the as-grown film that was absent after the plasma treatment. These measurements further revealed chemical differences between the as-deposited and the plasma treated SnO{sub 2} surfaces. All SnO{sub 2} films had Sn{sup 2+}-O bonds. The AR-XPS Sn{sup 2+}-O signal intensity increased after plasma treatment, indicating that the oxygen plasma damaged the SnO{sub 2} surface. Additionally, an O{sub 2} adlayer was formed due to the oxygen plasma treatment. The damaged layer due to oxygen ion bombardment, oxygen adsorption layer, and possibly bulk traps depleted the surface carriers which enabled the formation of a Schottky contact with Au.

OSTI ID:
21476127
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 3; Other Information: DOI: 10.1063/1.3298467; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English