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Title: Heteroepitaxial growth of SnO{sub 2} thin films on SrTiO{sub 3} (111) single crystal substrate by laser molecular beam epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3273494· OSTI ID:21476077
; ;  [1];  [2];  [3]
  1. Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore)
  3. Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

SnO{sub 2} films with a thickness around 150 nm were deposited on the (111) surface of a SrTiO{sub 3} single crystal substrate by laser molecular beam epitaxy technique in a temperature range 600-750 deg. C and oxygen pressure from 10{sup -3} to 1 Pa, respectively. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial relations were further investigated by ex situ x-ray diffraction measurement in different geometries. All the films were confirmed to be highly (200) oriented showing good crystalline quality, despite the large lattice mismatch between SnO{sub 2} and SrTiO{sub 3}. Based on the crystallographic model and structure analysis, six equivalent directions in the SrTiO{sub 3} (111) surface for the nucleation of SnO{sub 2} were discovered, which confirmed the existence of sixfold symmetrical domains in the SnO{sub 2} epilayer. Additionally, the optical dielectric function of the SnO{sub 2}/SrTiO{sub 3} epitaxial film was simulated by the Tauc-Lorentz-Drude model in the UV-vis-NIR region.

OSTI ID:
21476077
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 1; Other Information: DOI: 10.1063/1.3273494; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English