Self-reflection effect in semiconductors in a two-pulse regime
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Department of Physics and Mathematics, T.G. Shevchenko Pridnestrie State University (Moldova, Republic of)
Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted. (nonlinear optical phenomena)
- OSTI ID:
- 21470666
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 12 Vol. 34; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
Similar Records
The features of light reflection from the interface of a semi-infinite nonlinear crystal upon two-photon excitation of biexcitons
Self-reflection in a system of excitons and biexcitons in semiconductors
Reflection of an electromagnetic pulse incident on a nonlinear medium
Journal Article
·
Tue Jan 30 23:00:00 EST 2001
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21442798
Self-reflection in a system of excitons and biexcitons in semiconductors
Journal Article
·
Sun Oct 31 00:00:00 EDT 1999
· Quantum Electronics (Woodbury, N.Y.)
·
OSTI ID:21439486
Reflection of an electromagnetic pulse incident on a nonlinear medium
Journal Article
·
Sun Nov 30 23:00:00 EST 1997
· Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics
·
OSTI ID:550494