Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

Journal Article · Sun Oct 31 00:00:00 EDT 2004 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2004V034N10ABEH002752· OSTI ID:21470630

Zverev, M M ^[1]; Peregudov, D V ^[2]; Sedova, I V; Sorokin, S V; Ivanov, S V; Kop'ev, P S ^[3]

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1. State Research Center of Russian Federation 'Troitsk Institute for Innovation and Fusion Research', Troitsk, Moscow Region (Russian Federation)
2. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
3. A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

The parameters of 494-555-nm Cd(Zn)Se/ZnMgSSe green lasers with differently designed active regions pumped by a 8-30-keV electron beam are studied. The minimum threshold current density (0.6-0.8 A cm{sup -2} at room temperature) is obtained for a structure with the active region consisting of a ZnSe quantum well with a CdSe fractional monolayer insertion. (lasers)

• OSTI ID: 21470630
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 34, Issue 10; Other Information: DOI: 10.1070/QE2004v034n10ABEH002752; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM SELENIDES
CURRENT DENSITY
ELECTRON BEAM PUMPING
ELECTRON BEAMS
KEV RANGE
QUANTUM WELLS
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
ZINC SELENIDES
BEAMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PUMPING
ENERGY RANGE
LASERS
LEPTON BEAMS
NANOSTRUCTURES
PARTICLE BEAMS
PUMPING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
TEMPERATURE RANGE
ZINC COMPOUNDS