skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3488812· OSTI ID:21467004
; ; ;  [1]; ;  [2]
  1. Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany)
  2. Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)

We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.

OSTI ID:
21467004
Journal Information:
Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3488812; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English