An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode
- Department of Physics and Center for Optoelectronics and Photonics Paderborn (CeOPP), University of Paderborn, Warburger Street 100, 33098 Paderborn (Germany)
- Applied Solid State Physics, Ruhr-University of Bochum, Universitaetsstr. 150, 44780 Bochum (Germany)
We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski-Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.
- OSTI ID:
- 21467004
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3488812; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DOPED MATERIALS
ELECTROLUMINESCENCE
EMISSION SPECTROSCOPY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
ION BEAMS
JUNCTION DIODES
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
NUCLEATION
OPTICAL PUMPING
QUANTUM DOTS
RANDOMNESS
SEMICONDUCTOR MATERIALS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PHOTON EMISSION
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY