The disordering effect of Ti observed in the microstructure and electrical properties of W{sub 0.95}Ti{sub 0.05}O{sub 3} thin films

Journal Article · Mon Oct 04 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3496473· OSTI ID:21467003

Kalidindi, N R; Bharathi, K Kamala; Ramana, C V ^[1]

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1. Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

We report on the inhibition of WO{sub 3} crystallization by the addition of Ti observed in sputter-deposited W{sub 0.95}Ti{sub 0.05}O{sub 3} films. The effect of growth-temperature on the crystallization indicates that the W{sub 0.95}Ti{sub 0.05}O{sub 3} films grown at temperatures <300 deg. C are amorphous compared to WO{sub 3} crystalline films at 100-200 deg. C. Phase transformation is induced in W{sub 0.95}Ti{sub 0.05}O{sub 3} resulting in tetragonal structure at {>=}300 deg. C. The corresponding electrical properties exhibit a clear distinction as a function of these structural transformations. Temperature-dependent dc electrical conductivity (80-300 K) shows the semiconducting nature of W{sub 0.95}Ti{sub 0.05}O{sub 3} films and exhibits two distinct regions indicative of two different types of transport mechanisms.

• OSTI ID: 21467003
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALLIZATION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
MATERIALS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES