Erbium diffusion in silicon dioxide

Journal Article · Mon Oct 04 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3497076· OSTI ID:21466996

Yingwei, Lu; Julsgaard, B; Petersen, M Christian ^[1]; Jensen, R V. Skougaard ^[2]; Pedersen, T Garm; Pedersen, K ^[2]; Larsen, A Nylandsted ^[1]

---

1. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
2. Department of Physics and Nanotechnology, Aalborg University, DK-9220 Aalborg O (Denmark)

Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3{+-}0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.

• OSTI ID: 21466996
• Journal Information: Applied Physics Letters, Vol. 97, Issue 14; Other Information: DOI: 10.1063/1.3497076; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CHEMICAL VAPOR DEPOSITION
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
DIFFUSION
ERBIUM
EV RANGE
FICK LAWS
IONS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
SILICON OXIDES
SPUTTERING
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COATING
DEPOSITION
ELEMENTS
ENERGY
ENERGY RANGE
METALS
OXIDES
OXYGEN COMPOUNDS
RARE EARTHS
SILICON COMPOUNDS
SIMULATION
SPECTRA
SPECTROSCOPY
SURFACE COATING