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Efficiency of population of the {sup 4}I{sub 13/2} level of the Er{sup 3+} ion and the possibility of lasing at 1.5 {mu}m in Yb, Er:YAG at high temperatures

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ;  [1]
  1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
It is shown that, as the temperature of an Yb, Er:YAG crystal is increased from room temperature to 400-600{sup 0}C, the efficiency of energy accumulation on the {sup 4}I{sub 13/2} level of the Er{sup 3+} ion increases by several times upon optical pumping through Yb{sup 3+} ions. Under these conditions, up to 60% of erbium ions can be excited, which gives promise that lasing at a wavelength of 1.54 {mu}m can be achieved in the Yb, Er:YAG crystal in the three-level scheme. (special issue devoted to the 25th anniversary of the a.m. prokhorov general physics institute)
OSTI ID:
21466734
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 10 Vol. 37; ISSN 1063-7818
Country of Publication:
United States
Language:
English