Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

A 913-nm diode-pumped quasi-three-level Nd{sup 3+}:Gd{sub 0.7}Y{sub 0.3}VO{sub 4} laser

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ; ; ; ; ;  [1]; ; ;  [2]
  1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  2. Institute of Applied Physics, University of Bern (Switzerland)
Lasing parameters of a mixed Nd{sup 3+}:Gd{sub 0.7}Y{sub 0.3}VO{sub 4} vanadate crystal emitting at the 913-nm {sup 4}F{sub 3/2}-{sup 4}I{sub 9/2} laser transition are studied. The output power of up to 600 mW was obtained upon longitudinal diode pumping for the absolute and slope laser efficiencies of {approx}13% and {approx}17%, respectively. (lasers)
OSTI ID:
21466666
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 5 Vol. 37; ISSN 1063-7818
Country of Publication:
United States
Language:
English

Similar Records

Active and passive mode locking in a diode-pumped Nd:Gd{sub 0.7}Y{sub 0.3}VO{sub 4} laser
Journal Article · Mon Apr 30 00:00:00 EDT 2007 · Quantum Electronics (Woodbury, N.Y.) · OSTI ID:21466644

Phonons in isostructural (ND,Yb):Y{sub x}Gd{sub 1-x}(VO{sub 4}) laser crystals: A Raman scattering study
Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Solid State Chemistry · OSTI ID:21504062

New possibilities of neodymium-doped vanadate crystals as active media for diode-pumped lasers
Journal Article · Wed Oct 31 00:00:00 EDT 2007 · Quantum Electronics (Woodbury, N.Y.) · OSTI ID:21466728