Preparation and study of epitaxial Cr{sup 4+} : GGG films for passive Q switches in neodymium lasers

Journal Article · Mon Jul 31 04:00:00 EDT 2006 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2006V036N07ABEH013175· OSTI ID:21466547

Bufetova, G A; Gusev, M Yu; Ivanov, I A; Nikolaev, D A; Seregin, V F; Tsvetkov, V B

The efficient technology is developed for growing Cr- and Ca-doped gadolinium-gallium garnet single-crystal films of thickness up to 100 {mu}m on large substrates (76 mm) by the method of liquid-phase epitaxy from a solution-melt. The dependences of the absorption spectra of films and optical losses at 1 {mu}m on the growth conditions and the solution-melt composition are studied. It is shown that Cr{sup 4+} ions are formed in the films, and these films can be used as passive Q switches in lasers. (special issue devoted to the 90th anniversary of a.m. prokhorov)

• OSTI ID: 21466547
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 7 Vol. 36; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
ALKALINE EARTH METALS
CALCIUM
CHARGED PARTICLES
CHROMIUM IONS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DIMENSIONS
DISPERSIONS
DOPED MATERIALS
ELEMENTS
EPITAXY
FILMS
GADOLINIUM
GALLIUM
GARNETS
HOMOGENEOUS MIXTURES
IONS
LASERS
LIQUID PHASE EPITAXY
MATERIALS
METALS
MINERALS
MIXTURES
MONOCRYSTALS
NEODYMIUM LASERS
Q-SWITCHING
RARE EARTHS
SILICATE MINERALS
SOLID STATE LASERS
SOLUTIONS
SPECTRA
SUBSTRATES
THICKNESS
THIN FILMS