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Title: The origin of oxygen in oxide thin films: Role of the substrate

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3515849· OSTI ID:21464560
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  1. Department of General Energy Research, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

During the growth of oxide thin films by pulsed laser deposition, a strong oxygen substrate-to-film transfer has been experimentally observed for SrTiO{sub 3} and LaAlO{sub 3} thin films epitaxially grown on {sup 18}O exchanged SrTiO{sub 3} and LaAlO{sub 3} substrates by secondary ion mass spectrometry depth profiling. This oxygen transfer effect can seriously change the respective thin film properties. Taking the oxygen substrate contribution to the overall oxygen balance into account, original ways to design material properties of oxide thin films can be envisioned like a controlled charge carrier doping of SrTiO{sub 3} thin films.

OSTI ID:
21464560
Journal Information:
Applied Physics Letters, Vol. 97, Issue 19; Other Information: DOI: 10.1063/1.3515849; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English