Microwave properties of epitaxial (111)-oriented Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films on Al{sub 2}O{sub 3}(0001) up to 40 GHz

Journal Article · Mon Oct 18 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3478015· OSTI ID:21464527

Lihui, Yang ^[1]; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Fancois ^[2]; Genshui, Wang; Xianlin, Dong ^[1]; Chateigner, Daniel ^[3]

---

1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
2. UMR CNRS 8520, IEMN-DOAE-MIMM Team, Bat. P3, Cite Scientifique, Villeneuve d'Ascq, 59655 Lille (France)
3. CRISMAT-ENSICAEN, Universite de Caen Basse-Normandie, Campus 2-6, Bd. M. Juin, 14050 Caen (France)

Perovskite Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films have been grown on Al{sub 2}O{sub 3}(0001) substrates without/with inserting an ultrathin TiO{sub x} seeding layer by rf magnetron sputtering. X-ray diffraction and pole figure studies reveal that the film with the TiO{sub x} layer (12-A-thick) is highly oriented along the (111) direction and exhibits a good in-plane relationship of BST(111)||Al{sub 2}O{sub 3}(0001). The high frequency dielectric measurements demonstrate that the complex permittivity ({epsilon}={epsilon}{sup '}-j{epsilon}{sup ''}) is well described by a Curie-von Scheidler dispersion with an exponent of 0.40. The resulting epitaxial BST films show high permittivity ({approx}428) and tunability ({approx}41%, at 300 kV/cm and 40 GHz) and their microwave properties (1-40 GHz) potentially could be made suitable for tunable devices.

• OSTI ID: 21464527
• Journal Information: Applied Physics Letters, Vol. 97, Issue 16; Other Information: DOI: 10.1063/1.3478015; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
BARIUM COMPOUNDS
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
EPITAXY
GHZ RANGE
LAYERS
MICROWAVE RADIATION
PERMITTIVITY
SPUTTERING
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
ALUMINIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DIELECTRIC PROPERTIES
DIFFRACTION
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FILMS
FREQUENCY RANGE
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SCATTERING
STRONTIUM COMPOUNDS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS