Entangling gates for local spin qubits by using electric current

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Physical Review. A

DOI:https://doi.org/10.1103/PHYSREVA.82.032309· OSTI ID:21456954

Shijie, Xiong ^[1]; Ye, Xiong ^[2]; Oh, C H ^[3]

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1. Department of Physics, Nanjing University, Nanjing 210093 (China)
2. College of Physical Science and Technology, Nanjing Normal University, Nanjing 210097 (China)
3. Department of Physics and Centre for Quantum Technologies, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

We show that entanglement between two local spins which are initially independent and act as qubits can be established by applying an electron current through them. The setup can be realized by using spin-(1/2) quantum dots as the qubits and equally connecting them to leads with the tip of scanning tunnel microscopy. The tunneling of electrons through two dots is in the sequential regime and the entanglement between dots originates from the quantum coherence of two tunneling channels. We calculate the effect of the electron current on the entanglement of local qubits fully quantum-mechanically by using extended scattering-matrix theory and analyze the favorite conditions for the realization of entangling gates.

• OSTI ID: 21456954
• Journal Information: Physical Review. A, Journal Name: Physical Review. A Journal Issue: 3 Vol. 82; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ANGULAR MOMENTUM
CURRENTS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
INFORMATION
LEPTONS
MATRICES
MICROSCOPY
NANOSTRUCTURES
PARTICLE PROPERTIES
QUANTUM DOTS
QUANTUM ENTANGLEMENT
QUANTUM INFORMATION
QUBITS
S MATRIX
SCANNING ELECTRON MICROSCOPY
SPIN
TUNNEL EFFECT