Three-mode entanglement via tunneling-induced interference in a coupled triple-semiconductor quantum-well structure
- School of Physics, Ludong University, Yantai 264025 (China)
- Institute of Advanced Nanophotonics State Key Lab of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China)
A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.
- OSTI ID:
- 21456930
- Journal Information:
- Physical Review. A, Vol. 82, Issue 1; Other Information: DOI: 10.1103/PhysRevA.82.012323; (c) 2010 The American Physical Society; ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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