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On the diagnostics of semiconductors upon two-photon excitation of biexcitons

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
 [1];  [2]
  1. Institute of Applied Physics, Academy of Sciences of Moldova, Kishinev (Moldova, Republic of)
  2. T.G. Shevchenko Dnester State University, Tiraspol (Moldova, Republic of)
A version of the one-photon probing of optical properties of semiconductors is presented under conditions when a high-power pump pulse excites biexcitons from the ground state of a crystal due to two-photon absorption. The existence of a Lorentzian absorption peak is predicted and the quasi-polariton dispersion law is found in the region where a real energy level is absent. The temporal evolution of the absorption band under the action of ultrashort pulses is studied. (nonlinear optical phenomena)
OSTI ID:
21456891
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 5 Vol. 36; ISSN 1063-7818
Country of Publication:
United States
Language:
English