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Mechanisms of a change in the refractive index of an intensely pumped Yb:YAG crystal

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ; ;  [1]; ;  [2]
  1. Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)
  2. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)
Mechanisms of a change in the refractive index appearing in an intensely diode-pumped Yb:YAG-laser disk element are studied with the help of polarisation interferometry and dynamic grating testing. It is found that changes in the electronic component of the refractive index arising upon changing the populations of electronic levels of Yb{sup 3+} ions (the ground {sup 2}F{sub 7/2} state and the upper {sup 2}F{sub 5/2} level of the laser transition) and caused by the difference in the polarisability of these levels are an order of magnitude greater than thermal changes in the refractive index. It is shown that the difference {Delta}p in the polarisability at the probe wavelength of 633 nm is 1.9 x 10{sup -26} cm{sup 3} and at the laser transition wavelength of 1029 nm is 1.6 x 10{sup -26} cm{sup 3}. (nonlinear optical phenomena)
OSTI ID:
21456885
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 5 Vol. 36; ISSN 1063-7818
Country of Publication:
United States
Language:
English