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Title: Luminescent and lasing characteristics of heavily doped Yb{sup 3+}:KY(WO{sub 4}){sub 2} crystals

Journal Article · · Quantum Electronics (Woodbury, N.Y.)
; ; ;  [1];  [2]; ; ; ;  [3]
  1. International Laser Center, Belarus State Technical University, Minsk (Belarus)
  2. A.V. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)
  3. ETH Zuerich, Physics Department, Institute of Quantum Electronics, Zuerich (Switzerland)

The luminescence decay times are measured taking into account reabsorption for KY(WO{sub 4}){sub 2}:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb{sup 3+} ions was measured to be 233 {mu}s. The cw output power of 1.46 and 1.62 W was achieved with the slope efficiency 52% and 47% for Yb:KYW lasers with the atomic concentration of Yb{sup 3+} ions equal to 10% and 30%, respectively. Using a semiconductor mirror with a saturable absorber (SESAM) in the passive mode-locking regime, pulses of duration 194 and 180 fs were obtained at wavelengths of 1042 and 1039 nm for crystals with Yb{sup 3+} concentrations equal to 10% and 30%, respectively, the average output power being 0.63 and 0.75 W. (lasers and amplifiers)

OSTI ID:
21456880
Journal Information:
Quantum Electronics (Woodbury, N.Y.), Vol. 36, Issue 4; Other Information: DOI: 10.1070/QE2006v036n04ABEH013143; ISSN 1063-7818
Country of Publication:
United States
Language:
English