Anomalous enhancement of the thermoelectric power in gallium-doped p-(Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} single crystals
- Moscow State University (Russian Federation)
The effect of gallium on the temperature dependences (5 K {<=} T {<=} 300 K) of Seebeck coefficient {alpha}, electrical conductivity {sigma}, thermal conductivity k, and thermoelectric efficiency Z of mixed p-(Bi{sub 0.5}Sb{sub 0.5}){sub 2}Te{sub 3} semiconductor single crystals is studied. The hole concentration decreases upon gallium doping; that is, gallium causes a donor effect. The Seebeck coefficient increases anomalously, i.e., much higher than it should be at the detected decrease in the hole concentration. This leads to an enhancement of the thermoelectric power. The observed changes in the Seebeck coefficient indicate a noticeable gallium-induced change in the density of states in the valence band.
- OSTI ID:
- 21443557
- Journal Information:
- Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 4 Vol. 110; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANTIMONY COMPOUNDS
ANTIMONY TELLURIDES
BISMUTH COMPOUNDS
BISMUTH TELLURIDES
CHALCOGENIDES
CONCENTRATION RATIO
CRYSTALS
DENSITY
DIMENSIONLESS NUMBERS
DOPED MATERIALS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
ENERGY-LEVEL DENSITY
GALLIUM ADDITIONS
GALLIUM ALLOYS
HOLES
MATERIALS
MONOCRYSTALS
P-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
THERMOELECTRIC PROPERTIES
VALENCE