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Spin dynamics of charge carriers in the process of their localization in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} single crystals

Journal Article · · Journal of Experimental and Theoretical Physics
;  [1];  [2];  [3];  [4]
  1. Russian Academy of Sciences, Institute of Problems of Chemical Physics (Russian Federation)
  2. Graduate University for Advanced Studies (Japan)
  3. Institute for Molecular Science (Japan)
  4. Osaka-Ohtani University, Faculty of Pharmacy (Japan)
Sharp changes in the integral intensity and linewidth of the ESR spectrum that accompany the localization of the charge carriers have been revealed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} crystals. It has been found that the types of localization in two compounds under investigation are different: charge carriers in {beta}''-(BEDT-TTF){sub 4}NH{sub 4}[Cr(C{sub 2}O{sub 4}){sub 3}] are localized on irregular defects of the crystal lattice, whereas charge carriers in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} are localized at the regular positions of the unit cell. The exchange narrowing of the ESR line and a sharp decrease in the dc and ac magnetic susceptibilities are observed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} at low temperatures T < 50 K. The dc and ac magnetic susceptibilities observed in {alpha}'-(BEDT-TTF){sub 2}IBr{sub 2} at high temperatures T > 50 K differ from each other, because the thermally activated hopping frequency of the charge carriers is higher than the frequency of the measuring UHF field of an ESR spectrometer.
OSTI ID:
21443343
Journal Information:
Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 5 Vol. 111; ISSN 1063-7761
Country of Publication:
United States
Language:
English