Phase locking of eight wide-aperture semiconductor laser diodes in one-dimensional and two-dimensional configurations in an external Talbot cavity
- A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
- M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)
- Natural Science Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Phase locking of the output radiation and mode selection were achieved experimentally in an external Talbot cavity, of length L=Z{sub T}/4 and containing one linear array of eight wide-aperture laser diodes each 120 {mu}m wide. Such phase locking was also attained for two parallel linear arrays. The radiation from a single linear array was characterised by the contrast parameter V=0.97 and by the angular width of the diffraction maxima amounting to 0.5 mrad at half-intensity corresponding to the diffraction limit for a linear array with a diode spacing period d=200 {mu}m. A cavity with a tilted mirror was investigated and the feasibility of increasing the radiation intensity in the central lobes was demonstrated. Phase locking was attained experimentally for two linear arrays separated by a distance of 1600 {mu}m. The angular width of the maxima was 0.5 mrad in the p-n junction plane and 0.25 mrad in a plane perpendicular to the junction. (control of laser radiation parameters)
- OSTI ID:
- 21439431
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 28, Issue 4; Other Information: DOI: 10.1070/QE1998v028n04ABEH001194; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APERTURES
CONFIGURATION
DIFFRACTION
LASER CAVITIES
LASER RADIATION
MIRRORS
MODE LOCKING
MODE SELECTION
ONE-DIMENSIONAL CALCULATIONS
P-N JUNCTIONS
SEMICONDUCTOR LASERS
TWO-DIMENSIONAL CALCULATIONS
COHERENT SCATTERING
ELECTROMAGNETIC RADIATION
LASERS
OPENINGS
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
TUNING